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UG30APT thru UG30DPT
Vishay General Semiconductor
Document Number: 88762
Revision: 05-Jun-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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3
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Leakage Characteristics Per Diode
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneo
u
s For
w
ard C
u
rrent (A)
TJ
= 25 °C
Pulse Width = 300 μs
1 %
D
uty Cycle
0
20
40
60
80
100
0.01
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Re
v
erse Leakage
C
u
rrent (
μ
A)
TJ
= 100 °C
TJ
= 25 °C
Figure 5. Reverse Switching Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
Junction Temperature (°C)
IF
= 15 A
VR
= 30
V
dI/dt = 100 A/μs
dI/dt = 50 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
dI/dt = 150 A/μs
dI/dt = 20 A/μs
Reco
v
ered Store Change/Re
v
erse
Reco
v
ery Time (nC/ns)
0.1
1
10
100
1
10
100
Reverse Voltage (V)
J
u
nction Capacitance (pF)
TJ
= 125 °C
f = 1.0 MHz
Vsig
= 50 m
Vp-p
PIN
1
PIN
3
CASE
PIN
2
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138
(3.5)
0.170
(4.3)
0.086(2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048
(1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078
(1.9
8) REF.
0.203 (5.16)
0.193 (4.90)
10° TYP.
Both Sides
30°
10
1° REF.
Both Sides
0.030 (0.76)
0.020 (0.51)
0.118
(3.0)
0.108
(2.7)
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